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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films

Emmanuel Jacques1*, Laurent Pichon1, Olivier Debieu2 and Fabrice Gourbilleau2

Author Affiliations

1 Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France

2 Centre de Recherche sur les Ions, les MAté riaux et la Photonique, UMR CEA/CNRS/ENSICAEN/UCBN 6 boulevard du Maréchal Juin, Caen Cedex 4, 14050 France

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Nanoscale Research Letters 2011, 6:170  doi:10.1186/1556-276X-6-170

Published: 24 February 2011


We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.