Figure 4.

AFM images and C - AFM current map for samples annealed without a protective carbon capping layer. Surface morphology (a) and C-AFM current map (b) on a contact Ti/Al fabricated on the Al+-implanted 4H-SiC surface and annealed at 1700°C without a protective carbon capping layer.

Frazzetto et al. Nanoscale Research Letters 2011 6:158   doi:10.1186/1556-276X-6-158
Download authors' original image