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Resolution: standard / high Figure 4.
AFM images and C - AFM current map for samples annealed without a protective carbon capping layer. Surface morphology (a) and C-AFM current map (b) on a contact Ti/Al fabricated on the Al+-implanted 4H-SiC surface and annealed at 1700°C without a protective carbon capping layer.
Frazzetto et al. Nanoscale Research Letters 2011 6:158 doi:10.1186/1556-276X-6-158 |
