Figure 2.

AFM images of the Al+-implanted and annealed 4H-SiC surface. (a) Sample annealed at 1700°C without a protective carbon capping layer. (b) Sample annealed at 1700°C with a protective carbon capping layer.

Frazzetto et al. Nanoscale Research Letters 2011 6:158   doi:10.1186/1556-276X-6-158
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