|
Resolution: standard / high Figure 2.
AFM images of the Al+-implanted and annealed 4H-SiC surface. (a) Sample annealed at 1700°C without a protective carbon capping layer. (b) Sample annealed at 1700°C with a protective carbon capping layer.
Frazzetto et al. Nanoscale Research Letters 2011 6:158 doi:10.1186/1556-276X-6-158 |
