Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
1 Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi-Strada VIII, n. 5, Zona Industriale, 95121, Catania, Italy
2 STMicroelectronics, Stradale Primosole 50, 95121, Catania, Italy
3 Scuola Superiore di Catania, University of Catania, Via Valdisavoia, 9, 95123, Catania, Italy
Nanoscale Research Letters 2011, 6:158 doi:10.1186/1556-276X-6-158Published: 21 February 2011
This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM.
The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results.