Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
1 School of Physics, Jilin University, Changchun 130021, PR China
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, PR China
3 INSA-CNRS-UPS; LPCNO, Université de Toulouse, 135 av. de Rangueil, 31077 Toulouse, France
Citation and License
Nanoscale Research Letters 2011, 6:149 doi:10.1186/1556-276X-6-149Published: 16 February 2011
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.