Open Access Nano Express

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu12, Huiqi Ye2, Gang Wang2, Haitao Tian, Wenxin Wang2, Wenquan Wang12, Baoli Liu2* and Xavier Marie3*

Author affiliations

1 School of Physics, Jilin University, Changchun 130021, PR China

2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, PR China

3 INSA-CNRS-UPS; LPCNO, Université de Toulouse, 135 av. de Rangueil, 31077 Toulouse, France

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Citation and License

Nanoscale Research Letters 2011, 6:149  doi:10.1186/1556-276X-6-149

Published: 16 February 2011

Abstract

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.