Figure 5.

Magnetoresistance measurements of the best sample at different temperatures. (a) Longitudinal and transverse resistances of low p-type doped (ns = 8 × 1011 cm-2) epitaxial monolayer versus applied magnetic field B, at different temperatures. (b) Temperature dependence of the resistivity ρxx of a graphene ribbon at different magnetic field values close to the filling factor v = 3. The slope in the semilog scale gives the activation energy Ea, which is the energy difference between the Fermi energy and the mobility edge of the second (N = 1) Landau level.

Camara et al. Nanoscale Research Letters 2011 6:141   doi:10.1186/1556-276X-6-141
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