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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Nicolas Camara1, Benoit Jouault1*, Bilal Jabakhanji1, Alessandra Caboni2, Antoine Tiberj1, Christophe Consejo1, Philipe Godignon2 and Jean Camassel1

Author affiliations

1 Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France

2 CNM-IMB-CSIC - Campus UAB 08193 Bellaterra, Barcelona, Spain

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Citation and License

Nanoscale Research Letters 2011, 6:141  doi:10.1186/1556-276X-6-141

Published: 14 February 2011


Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.