Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
1 Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
2 CNM-IMB-CSIC - Campus UAB 08193 Bellaterra, Barcelona, Spain
Nanoscale Research Letters 2011, 6:141 doi:10.1186/1556-276X-6-141Published: 14 February 2011
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.