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Coherent magnetic semiconductor nanodot arrays

Yong Wang12*, Faxian Xiu2*, Ya Wang1, Jin Zou1*, Ward P Beyermann3, Yi Zhou2 and Kang L Wang2

Author Affiliations

1 Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia

2 Electrical Engineering Department, University of California, Los Angeles, 56-125B Engineering IV Building, Los Angeles, CA, 90095, USA

3 Department of Physics, University of California-Riverside, 900 University Ave., Riverside, CA, 92521, USA

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Nanoscale Research Letters 2011, 6:134  doi:10.1186/1556-276X-6-134

Published: 11 February 2011


In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.