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Resolution: standard / high Figure 6.
Nanoscale electrical properties of the thin oxide formed by the RTO process monitored
by C-AFM. AFM image (a) and C-AFM image (b) of stripes on surface of AlGaN by RTA oxidized at 900°C for 10 min.
Greco et al. Nanoscale Research Letters 2011 6:132 doi:10.1186/1556-276X-6-132 |
