Figure 2.

Capacitance and sheet carrier density versus gate bias. Capacitance versus gate bias (C-VGS) (a) and sheet carrier density versus gate bias (ns-VGS) (b) measured on the untreated (squares) and plasma treated (triangles) devices.

Greco et al. Nanoscale Research Letters 2011 6:132   doi:10.1186/1556-276X-6-132
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