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Resolution: standard / high Figure 1.
Schematic representations. Schematic representations of an untreated HEMT device (a) and of a HEMT subjected to CHF3 plasma processing (b). IDS-VDS characteristics of HEMT device not subjected to the plasma treatment (squares) and
subjected to the plasma treatment and to an annealing (triangles).
Greco et al. Nanoscale Research Letters 2011 6:132 doi:10.1186/1556-276X-6-132 |
