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On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers

Chi-Te Liang1*, Li-Hung Lin2, Chen Kuang Yoa1, Shun-Tsung Lo1, Yi-Ting Wang1, Dong-Sheng Lou3, Gil-Ho Kim4, Chang Yuan-Huei1, Yuichi Ochiai5, Nobuyuki Aoki5, Jeng-Chung Chen3, Yiping Lin3, Huang Chun-Feng6, Sheng-Di Lin7 and David A Ritchie8

Author affiliations

1 Department of Physics, National Taiwan University, Taipei 106, Taiwan

2 Department of Applied Physics, National Chiayi University, Chiayi 600, Taiwan

3 Department of Physics, National Tsinghwa University, Hsinchu 300, Taiwan

4 Department of Electronic and Electrical Engineering and SAINT, Sungkyunkwan University, Suwon 440-746, Korea

5 Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan

6 National Measurement Laboratory, Centre for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan

7 Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

8 Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK

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Citation and License

Nanoscale Research Letters 2011, 6:131  doi:10.1186/1556-276X-6-131

Published: 11 February 2011


A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.