Nano Express
On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers
1 Department of Physics, National Taiwan University, Taipei 106, Taiwan
2 Department of Applied Physics, National Chiayi University, Chiayi 600, Taiwan
3 Department of Physics, National Tsinghwa University, Hsinchu 300, Taiwan
4 Department of Electronic and Electrical Engineering and SAINT, Sungkyunkwan University, Suwon 440-746, Korea
5 Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan
6 National Measurement Laboratory, Centre for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan
7 Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
8 Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
Nanoscale Research Letters 2011, 6:131 doi:10.1186/1556-276X-6-131
Published: 11 February 2011Abstract
A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.
