Table 1 |
|||||
|
Growth parameters and the thickness for samples A-D |
|||||
|
Sample |
Growth temperature (°C) |
As4/Mn BEP ratio |
Furnace cooling |
Thickness (nm) |
GaAs substrate |
|
|
|||||
|
A |
230 |
300 |
N |
11 |
GaAs (001) |
|
|
|||||
|
B |
210 |
175 |
N |
3 |
GaAs (110) |
|
|
|||||
|
C |
210 |
300 |
N |
11 |
GaAs (110) |
|
|
|||||
|
D |
210 |
175 |
Y |
11 |
GaAs (110) |
|
|
|||||
|
Xu et al. Nanoscale Research Letters 2011 6:125 doi:10.1186/1556-276X-6-125 |
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