Table 1

Growth parameters and the thickness for samples A-D

Sample

Growth temperature (°C)

As4/Mn BEP ratio

Furnace cooling

Thickness (nm)

GaAs substrate


A

230

300

N

11

GaAs (001)


B

210

175

N

3

GaAs (110)


C

210

300

N

11

GaAs (110)


D

210

175

Y

11

GaAs (110)


Xu et al. Nanoscale Research Letters 2011 6:125   doi:10.1186/1556-276X-6-125

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