Figure 4.

I-V spectroscopy, measured by C-AFM, and corresponding diode parameters. Localized forward (top) and reverse (bottom) I-V spectroscopy measured by C-AFM at 25 different tip locations on the Pt2Si contacts after annealing at 500°C (a), 700°C (b), and 900°C (c). The Schottky barrier heights (black, left axis) and leakage current densities taken at −3 V (red, right axis) extracted from I-V probe measurements for the different annealing temperatures are shown in (d).

Eriksson et al. Nanoscale Research Letters 2011 6:120   doi:10.1186/1556-276X-6-120
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