Figure 3.

Morphology of the SiC surface and current map of an adjacent Pt contact. AFM morphology of the 3C-SiC(001) surface (a) and C-AFM current map determined at a tip bias of −5 V on an adjacent Pt contact after annealing at 500°C (b).

Eriksson et al. Nanoscale Research Letters 2011 6:120   doi:10.1186/1556-276X-6-120
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