|
Resolution: standard / high Figure 3.
Morphology of the SiC surface and current map of an adjacent Pt contact. AFM morphology of the 3C-SiC(001) surface (a) and C-AFM current map determined at a tip bias of −5 V on an adjacent Pt contact
after annealing at 500°C (b).
Eriksson et al. Nanoscale Research Letters 2011 6:120 doi:10.1186/1556-276X-6-120 |
