Figure 2.

TEM images of the Pt(Pt2Si)/SiC interface. Bright-field, cross-section TEM images of the Pt(Pt2Si)/3C-SiC interface for the as-deposited Pt (a) and after annealing at 500°C (b), 700°C (c), and 900°C (d).

Eriksson et al. Nanoscale Research Letters 2011 6:120   doi:10.1186/1556-276X-6-120
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