Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films
Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy
Nanoscale Research Letters 2011, 6:118 doi:10.1186/1556-276X-6-118Published: 4 February 2011
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.