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Spin effects in InAs self-assembled quantum dots

Ednilson C dos Santos1, Yara Galvão Gobato1*, Maria JSP Brasil2, David A Taylor3 and Mohamed Henini3

Author affiliations

1 Physics Department, Federal University of São Carlos, São Carlos, Brazil

2 Physics Institute, UNICAMP, Campinas, Brazil

3 School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, UK

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Citation and License

Nanoscale Research Letters 2011, 6:115  doi:10.1186/1556-276X-6-115

Published: 3 February 2011


We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.