Figure 5.

Correlation between the length and the diameter of <111>-oriented Si NWs and <110>-oriented Ge NWs. For Ge NWs, the data are measured for two different growth times. The evaporation rate for both experiments was 1.5 ± 0.2 Å/s.

Xu et al. Nanoscale Research Letters 2011 6:113   doi:10.1186/1556-276X-6-113
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