Table 1 |
||||
|
Sample description of vertical SiNWs analyzed by the CP-AFM technique |
||||
|
Sample name |
Growth temp. (°C) |
Description |
Post-annealing treatment |
Nominal impurity concentration |
|
|
||||
|
CD-08-001 |
500 |
Undoped SiNWs/n-type Si (100) |
- |
Undoped |
|
CD-08-125 |
500 |
Doped SiNWs/n-type Si (100) |
5 min at 750°C |
[P] ≈ 1 × 1018 cm-3 |
|
CD-08-021 |
500 |
Doped SiNWs/n-type Si (100) |
5 min at 750°C |
[P] ≈ 1 × 1020 cm-3 |
|
|
||||
|
Alvarez et al. Nanoscale Research Letters 2011 6:110 doi:10.1186/1556-276X-6-110 |
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