Table 1

Sample description of vertical SiNWs analyzed by the CP-AFM technique

Sample name

Growth temp. (°C)

Description

Post-annealing treatment

Nominal impurity concentration


CD-08-001

500

Undoped SiNWs/n-type Si (100)

-

Undoped

CD-08-125

500

Doped SiNWs/n-type Si (100)

5 min at 750°C

[P] ≈ 1 × 1018 cm-3

CD-08-021

500

Doped SiNWs/n-type Si (100)

5 min at 750°C

[P] ≈ 1 × 1020 cm-3


Alvarez et al. Nanoscale Research Letters 2011 6:110   doi:10.1186/1556-276X-6-110

Open Data