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Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Filippo Giannazzo1*, Sushant Sonde12, Emanuele Rimini13 and Vito Raineri1

Author affiliations

1 CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy

2 Scuola Superiore di Catania, Via San Nullo, 5/I, 95123, Catania, Italy

3 Department of Physics and Astronomy, University of Catania, Via S. Sofia, 95123, Catania, Italy

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Citation and License

Nanoscale Research Letters 2011, 6:109  doi:10.1186/1556-276X-6-109

Published: 31 January 2011


In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences.