Nano Express
Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
Author affiliations
Dept. Eng. Electrònica, Edifici Q, Campus UAB, 08193 Bellaterra, Spain
Citation and License
Nanoscale Research Letters 2011, 6:108 doi:10.1186/1556-276X-6-108
Published: 31 January 2011Abstract
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
