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Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza*, Vanessa Iglesias, Marc Porti, Montse Nafria and Xavier Aymerich

Author Affiliations

Dept. Eng. Electrònica, Edifici Q, Campus UAB, 08193 Bellaterra, Spain

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Nanoscale Research Letters 2011, 6:108  doi:10.1186/1556-276X-6-108

Published: 31 January 2011


In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.