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On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

G Zatryb1, A Podhorodecki1*, J Misiewicz1, J Cardin2 and F Gourbilleau2

Author Affiliations

1 Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

2 CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, Ensicaen 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France

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Nanoscale Research Letters 2011, 6:106  doi:10.1186/1556-276X-6-106

Published: 31 January 2011


The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.