On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
1 Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2 CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, Ensicaen 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France
Nanoscale Research Letters 2011, 6:106 doi:10.1186/1556-276X-6-106Published: 31 January 2011
The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.