Figure 9.

Dependence of the cavity resonance position with ±1 nm fluctuations of the GaAs thickness in the DBR (d0 is the nominal GaAs DBR layer thickness) but weaker behaviour takes place when fluctuations occur in the AlAs layers.

Chaqmaqchee et al. Nanoscale Research Letters 2011 6:104   doi:10.1186/1556-276X-6-104
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