Figure 10.

Continuous line represents the calculated temperature dependence of bandgap energy for the device active area (GaInNAs/GaAs QW) using the BAC model, while the expected cavity resonance position is plotted with a dashed line and finally the scattered points represent the experimental data for PL (asterisks) and EL (squares).

Chaqmaqchee et al. Nanoscale Research Letters 2011 6:104   doi:10.1186/1556-276X-6-104
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