Figure 10.
Continuous line represents the calculated temperature dependence of bandgap energy
for the device active area (GaInNAs/GaAs QW) using the BAC model, while the expected
cavity resonance position is plotted with a dashed line and finally the scattered
points represent the experimental data for PL (asterisks) and EL (squares).
Chaqmaqchee et al. Nanoscale Research Letters 2011 6:104 doi:10.1186/1556-276X-6-104 |
