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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Shun-Tsung Lo1, Chiashain Chuang1, Sheng-Di Lin2*, Kuang Yao Chen1, Chi-Te Liang1*, Shih-Wei Lin2, Jau-Yang Wu2 and Mao-Rong Yeh1

Author affiliations

1 Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd. Taipei 106, Taiwan

2 Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

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Citation and License

Nanoscale Research Letters 2011, 6:102  doi:10.1186/1556-276X-6-102

Published: 26 January 2011


Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.