Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
1 Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd. Taipei 106, Taiwan
2 Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Nanoscale Research Letters 2011, 6:102 doi:10.1186/1556-276X-6-102Published: 26 January 2011
Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.