Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)
1 Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland
2 Institute of Problems of Mechanical Engineering, Russian Academy of Sciences IPME RAS, Bolshoy 61, V.O., 199178, St. Petersburg, Russia
3 Ioffe Physical Technical Institute, Polytechnicheskaya ul., 26, 194021, St. Petersburg, Russia
Nanoscale Research Letters 2010, 5:1507-1511 doi:10.1007/s11671-010-9670-6Published: 20 June 2010
A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.