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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

JM Liu*, XL Liu, XQ Xu, J Wang, CM Li, HY Wei, SY Yang, QS Zhu, YM Fan, XW Zhang and ZG Wang

Author Affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China

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Nanoscale Research Letters 2010, 5:1340-1343  doi:10.1007/s11671-010-9650-x

Published: 1 June 2010


X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

Valence band offset; w-InN/h-BN heterojunction; X-ray photoelectron spectroscopy; Conduction band offset; Valence band offset