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Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Zhiming M Wang, Yanze Z Xie, Vasyl P Kunets, Vitaliy G Dorogan, Yuriy I Mazur* and Gregory J Salamo

Author Affiliations

Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA

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Nanoscale Research Letters 2010, 5:1320-1323  doi:10.1007/s11671-010-9645-7

Published: 27 May 2010


Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.

Molecular beam epitaxy; InGaAs nanostructures; GaAs(210); Lateral ordering