Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA
Nanoscale Research Letters 2010, 5:1320-1323 doi:10.1007/s11671-010-9645-7Published: 27 May 2010
Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.