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Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

Huan Zhang1, Weiqiang Ding1*, Kai He2 and Ming Li3

Author Affiliations

1 Department of Mechanical and Aeronautical Engineering, Clarkson University, Potsdam, NY, 13699-5725, USA

2 School of Materials, Arizona State University, Tempe, AZ, 85287-8706, USA

3 Department of Mechanical and Aerospace Engineering, West Virginia University, Morgantown, WV, 26506-6106, USA

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Nanoscale Research Letters 2010, 5:1264-1271  doi:10.1007/s11671-010-9635-9

Published: 22 May 2010


In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5–12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite–type SiC (2H-SiC) with a growth direction of . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor–solid reaction dominated nanoribbon growth mechanism was discussed.

Silicon carbide; Nanomaterial synthesis; Nanoribbon; Nanobelt; Hexagonal wurtzite