## Figure 2.
Cross-sectional SEM images of curro pores etched into (100)
n-type InP. aN_{D} = 1·10^{17} cm^{−3}, U = 7 V, bN_{D} = 8·10^{17} cm^{−3}, U = 5.5 V, cN_{D} = 3·10^{18} cm^{−3}, U = 3 V. A magnified view of the pore tips is shown in the insets. In d, e, and f a typical FFT IS spectrum is shown in form of a Nyquist plot recorded after 38 min
of etching. The points represent the measured data, the line is calculated by fitting
the measurements to the model given in Eq. 1. The measurement frequencies are indicated
Leisner |