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Pores in n-Type InP: A Model System for Electrochemical Pore Etching

Malte Leisner*, Jürgen Carstensen and Helmut Föll

Author Affiliations

Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143, Kiel, Germany

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Nanoscale Research Letters 2010, 5:1190-1194  doi:10.1007/s11671-010-9624-z

Published: 14 May 2010


The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtainable. These include the space-charge-region (SCR) width, the SCR potential, the capacitance at the pore tips, and the avalanche breakdown field strength. It could be demonstrated that the system adjusts itself in such a way that the potential across the space-charge-region at the pore tips is kept constant within a certain bandwidth of the applied potential. This provides for a constant field strength at the pore tips, ensuring that avalanche breakdown occurs, generating the necessary holes for the electrochemical dissolution of InP.

Porous semiconductors; InP; Impedance spectroscopy