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Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot

LA Larsson1*, M Larsson1, ES Moskalenko2 and PO Holtz1

Author Affiliations

1 IFM, Semiconductor Materials, Linköping University, 58183, Linköping, Sweden

2 A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St. Petersburg, Russia

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Nanoscale Research Letters 2010, 5:1150-1155  doi:10.1007/s11671-010-9618-x

Published: 5 May 2010


Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.

Quantum dot; Wetting layer; Magnetic field; Temperature dependence; Charge state