Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
1 IFM, Semiconductor Materials, Linköping University, 58183, Linköping, Sweden
2 A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St. Petersburg, Russia
Nanoscale Research Letters 2010, 5:1150-1155 doi:10.1007/s11671-010-9618-xPublished: 5 May 2010
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.