Field Emission of ITO-Coated Vertically Aligned Nanowire Array
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea
Nanoscale Research Letters 2010, 5:1128-1131 doi:10.1007/s11671-010-9613-2Published: 29 April 2010
An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.