Figure S1 SEM image of the product obtained by the surfactant-assisted in situ chemical etching, in which the amount of CTAB used in the etching process is 5 wt%. From this result, we can see that the using of too much amount of CTAB will lead to the coating of the surface of ZnO nanorods array by a surfactant film, thus preventing the subsequent etching.
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Wang et al. Nanoscale Research Letters 2010 5:1102-1106 doi:10.1007/s11671-010-9608-z