Surfactant-Assisted in situ Chemical Etching for the General Synthesis of ZnO Nanotubes Array
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, 230031, Hefei, People’s Republic of China
Nanoscale Research Letters 2010, 5:1102-1106 doi:10.1007/s11671-010-9608-zPublished: 24 April 2010
Figure S1 SEM images of products obtained by etching the preformed ZnO nanorods array in ammonia solution (0.5 wt%) with different etching time: (a) 0 hr, (b) 1 hr, (c) 2 hrs, and (d) 3.5 hrs. From this result, we can see that without using the surfactant of CTAB, the ZnO nanorods become shorter and shorter in the etching process, always with shallow pits at the top end, and finally etch into broken pieces
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Figure S1 SEM image of the product obtained by the surfactant-assisted in situ chemical etching, in which the amount of CTAB used in the etching process is 5 wt%. From this result, we can see that the using of too much amount of CTAB will lead to the coating of the surface of ZnO nanorods array by a surfactant film, thus preventing the subsequent etching.
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