Figure 1.
a Schematic 3D illustration of n-ZnO NTs/p-GaN heterostructures LED device b I–V characteristics of the ZnO NTs–based light-emitting diode with threshold voltage
~5 V
Sadaf et al. Nanoscale Research Letters 2010 5:957 doi:10.1007/s11671-010-9588-z |
