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White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

JR Sadaf, MQ Israr, S Kishwar, O Nur and M Willander*

Author affiliations

Department of Science and Technology (ITN), Linköping University, 60174, Norrköping, Sweden

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Citation and License

Nanoscale Research Letters 2010, 5:957-960  doi:10.1007/s11671-010-9588-z

Published: 4 April 2010


We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour.

ZnO nanotubes; Light-emitting diodes; Electroluminescence; Lightning; White light sources