Table 2

Field-emission data of different samples, here Eto (V/μm) and Eth (V/μm) are turn-on electric field and threshold electric field, respectively; β is the field-enhancement factor
Samples Eto (V/μm) Eth (V/μm) β Data source
ZnO nanoneedle arrays 5.7 793 [34]
ZnS heterostructures 2.66 4.01 >2,600 [35]
Aligned N-doped CNTs 2.30 [14]
MWCNT 1.88 2.40 1.86 × 104 [37]
SWCNTs 2.40 3,392 [38]
Aligned CNTs 1.13 2.25 6,222 [18]
N-doped DWCNTs ~0.9 1.78 3,399 [39]
CuO nanoneedle arrays 0.85 [36]
FeNi-CNTs 0.30 0.65 2.48 × 104 [5]
ANCNT(780)a 0.45 0.60 6.41 × 104 This study
ANCNT(820)a 0.35 0.55 7.79 × 104 This study
ANCNT(860)a 0.27 0.49 1.09 × 105 This study

aANCNT (860), ANCNT (820), and ANCNT (780) denote the samples prepared by acetonitrile at a growth temperature of 860, 820, and 780°C, respectively

Cui et al.

Cui et al. Nanoscale Research Letters 2010 5:941-948   doi:10.1007/s11671-010-9586-1

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