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ZnSe/ZnSeTe Superlattice Nanotips

CH Hsiao1, SC Hung2, SH Chih1, SB Wang1, YC Cheng3, BR Huang4, SJ Young5 and SJ Chang1*

Author affiliations

1 Institute of Microelectronics & Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan

2 Department of Information Technology & Communication, Shih Chien University, Neimen, Kaohsiung 845, Taiwan

3 Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan

4 Graduate Institute of Electro-Optical Engineering, Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

5 Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan

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Citation and License

Nanoscale Research Letters 2010, 5:930-934  doi:10.1007/s11671-010-9584-3

Published: 28 March 2010


The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100) substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

ZnSe/ZnSeTe superlattice nanotip; Photoluminescence; Activation energies