Figure 3.

a Photoelectrical response of a single Se nanowire device under laser illumination of varying intensities at 10 K and 0.5 V bias. b Photocurrent as a function of illumination intensity for 514 nm laser excitation measured at 0.5 V bias and at different temperatures

Liao et al. Nanoscale Research Letters 2010 5:926-929   doi:10.1007/s11671-010-9585-2