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Temperature Dependence of Photoelectrical Properties of Single Selenium Nanowires

Zhi-Min Liao1*, Chong Hou1, Li-Ping Liu2 and Da-Peng Yu1*

Author Affiliations

1 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, People’s Republic of China

2 Department of Chemistry, TsingHua University, Beijing, People’s Republic of China

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Nanoscale Research Letters 2010, 5:926-929  doi:10.1007/s11671-010-9585-2

Published: 28 March 2010


Influence of temperature on photoconductivity of single Se nanowires has been studied. Time response of photocurrent at both room temperature and low temperature suggests that the trap states play an important role in the photoelectrical process. Further investigations about light intensity dependence on photocurrent at different temperatures reveal that the trap states significantly affect the carrier generation and recombination. This work may be valuable for improving the device optoelectronic performances by understanding the photoelectrical properties.

Se nanowires; Trap states; Photoconductivity; Temperature effects