Table 1

FWHM values of In0.2Ga0.8As/GaAs PL spectra on all orientations, and energy shift ∆E (= E(100) − E(xyz)) for high-index surfaces compared to (100)
Orientation FWHM (nm) ∆E (meV)
295 K 77 K 295 K 77 K
(100) 11.6 5.4
(731) 9.8 4.1 17 16
(210) 48 14.5 −21
(311) 7.4 2.9 16 16

Li et al.

Li et al. Nanoscale Research Letters 2010 5:1079-1084   doi:10.1007/s11671-010-9605-2

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