Figure 3.

Molecular Dynamic simulation results of the separation of NELO GaN nanostructures from GaN template near the SiO₂ mask. a Cross-sectional SEM image of NELO GaN near the nanostructured SiO₂ mask; the square illustrates the unit that was chosen in the MD simulation; b–f are the MD simulation results at time of 0, 60, 100, 140 and 180 ps after chemical removal of SiO₂, respectively. The results indicate that there is a large strain field at the corners of the GaN nanorods. and the built-in stress caused by the interaction between GaN and SiO₂ mask contributed to the fracture at the interface between the GaN film and the original GaN substrate