Figure 3.

Molecular Dynamic simulation results of the separation of NELO GaN nanostructures from GaN template near the SiO2 mask. a Cross-sectional SEM image of NELO GaN near the nanostructured SiO2 mask; the square illustrates the unit that was chosen in the MD simulation; bf are the MD simulation results at time of 0, 60, 100, 140 and 180 ps after chemical removal of SiO2, respectively. The results indicate that there is a large strain field at the corners of the GaN nanorods. and the built-in stress caused by the interaction between GaN and SiO2 mask contributed to the fracture at the interface between the GaN film and the original GaN substrate

Zang et al. Nanoscale Research Letters 2010 5:1051-1056   doi:10.1007/s11671-010-9601-6