Figure 1.

Schematic diagram of a structures of Nano epitaxial lateral overgrown (NELO) GaN. NELO GaN is grown by MOCVD through the nanopores of SiO2 mask that are fabricated on GaN substrate. b Nanoepitaxial chemical release of NELO GaN epilayers by using HF solution. The chemical removal of SiO2 mask leads to the NELO GaN together with GaN nanorods separate from the GaN template. c Cross sectional SEM images of NELO GaN before release and d after release; Insets are enlarged images near the interface of nanostructured SiO2 mask and GaN nanorods. e AFM images of top surface of released NELO GaN epilayer showing low defect density f 2D view of bottom surface of released NELO GaN showing the dense nanorod arrays. The diameter of the rod is ~60 nm, and the height of the nanorod is ~100 nm. It indicates that the separation happens at the interface of NELO GaN and the GaN template

Zang et al. Nanoscale Research Letters 2010 5:1051-1056   doi:10.1007/s11671-010-9601-6